Paper Titles

Segregation and Precipitation of Platinum Silicides in Si/SiO₂ Interfaces and Dislocations
p.157

Calculation of the Atomic and Electronic Structure of the {113} Planar Interstitial Defects in Silicon
p.163

Local Grain Boundary Property Measurements
p.171

Local Investigation of the Electrical Properties of Grain Boundaries in Silicon
p.183

Investigation of Minority Carrier Diffusion Length in Multicrystalline Silicon by Quantitative Electron Beam Induced Current Mapping
p.189

Minority Charge Carrier Trapping at Grain Boundaries Provided with a High Barrier Schottky Contact
p.195

Electrical Transport in Polycrystalline Semiconductors
p.201

Origin of Curved Arrhenius Plots for the Conductivity of Polycrystalline Semiconductors
p.213

Effect of Local Inhomogeneities on the Electrical Properties of Polycrystalline Silicon
p.219

HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Investigation of Minority Carrier Diffusion Length...

Investigation of Minority Carrier Diffusion Length in Multicrystalline Silicon by Quantitative Electron Beam Induced Current Mapping

Article Preview

Abstract:

You might also be interested in these eBooks

Polycrystalline Semiconductors III

Info:

Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

189-194

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.189

Citation:

Cite this paper

Online since:

March 1994

Authors:

A. Barhdadi, S. Sivoththaman, M. Barbe, M. Rodot, J.L. Maurice

Keywords:

Electron Beam Induced Current (EBIC), Mapping, Minority Carrier Diffusion Length, Polycrystalline Silicon, Solar Cell

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: