Paper Titles

Minority Carrier Transient Spectroscopy of Copper-Silicide and Nickel-Disilicide Precipitates in Silicon
p.301

Grain Growth of ZnSe Recrystallized in the Solid Phase
p.311

Lateral Doping Inhomogeneities as Revealed by μ-NEXAFS and μ-PES
p.317

Application of Surface Electron Beam Induced Voltage Method for the Contactless Characterization of Semiconductor Structures
p.327

Modification of Electronical and Optical Properties in SiO₂ Films by Electron Beam Irradiation
p.333

Fabrication and Ellipsometric Investigation of Thin Films of Rare-Earth Oxides
p.341

Non-Destructive Investigations of Co and CoSi_2-x Films on Si Substrate
p.347

Characterization of Laser-Irradiated Cd_xHg_1-xTe Solid Solutions by Scanning Microscopy Method
p.353

Scanning Acoustic Microscopes for the Investigation of Ferroelectric Properties of Materials
p.361

HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64Modification of Electronical and Optical...

Modification of Electronical and Optical Properties in SiO₂ Films by Electron Beam Irradiation

Article Preview

Abstract:

You might also be interested in these eBooks

Beam Injection Assessment of Defects in Semiconductors

Info:

Periodical:

Solid State Phenomena (Volumes 63-64)

Pages:

333-340

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64.333

Citation:

Cite this paper

Online since:

December 1998

Authors:

Hans Joachim Fitting, A. von Czarnowski, A.N. Trukhin, M. Goldberg, T. Barfels

Keywords:

Charge Injection, Dose Behaviour, IR Mode Softening, Irradiation Defects, Luminescence Centers, Silica, Thermal Annealing

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: