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On the Effect of Lead on Irradiation Induced Defects in Silicon

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Abstract:

Different group IV impurities (Pb, C, and Sn) have been introduced in the melt during the growth of n-type Czochralski silicon. The samples have been irradiated with 1 MeV electrons to a fluence of 4x1015cm-2. The irradiation-induced defects have been studied by Deep Level Transient Spectroscopy (DLTS). It is shown that the formation of one of the irradiation-induced deep level is avoided by the Pb-doping. This level is located at 0.37 eV from the conduction band edge (EC) and shows an apparent capture cross-section of 7x10-15cm2. In addition, another irradiation induced deep level located at EC - 0.32 eV has been studied in more details.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

373-378

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.373

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Online since:

December 2005

Authors:

Marie-Laure David, Eddy Simoen, Cor Claeys, V.B. Neimash, M. Kras'ko, A. Kraitchinskii, V. Voytovych, A. Kabaldin, Jean François Barbot

Keywords:

DLTS, Electron-Irradiation-Induced Defect, Pb, Silicon

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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