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Formation and Properties of Iron-Phosphorus and Iron-Phosphorus-Hydrogen Complexes in Silicon

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Abstract:

Hitherto unreported ESR signal, labeled TU10, was detected after annealing of electronirradiated silicon samples doped with phosphorus, iron and hydrogen. The ESR spectrum corresponds to a complex having monoclinic-I symmetry and S = 3/2 spin-state. Hyperfine structure of the TU10 spectrum suggests participation of two nucleus with spin I = 1/2 and 100% abundance in the core of the related defect. Doping of samples with hydrogen-deuterium mixture revealed presence of one hydrogen atom in the complex. The second nucleus with I = 1/2 is apparently a phosphorus atom. Presence of single iron atom was verified by doping with iron heaving modified isotope content. An intensity of the previously reported TU6 signal, related to iron-phosphorus complex, was significantly suppressed in hydrogen-doped samples.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

379-384

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.379

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Online since:

December 2005

Authors:

Teimuraz Mchedlidze

Keywords:

Defects in Si, Hydrogen Related Defects, Iron-Containing Defects, Iron-Donor Complexes

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] T. Mchedlidze and M. Suezawa: J. Phys.: Condens. Matter Vol. 16 (2004), p. L79.

Google Scholar

[2] A. A. Istratov, H. Heilsmair and E. R. Weber: Appl. Phys. Vol. A69 (1999), p.13.

Google Scholar

[3] E. G. Sieverts and C. A. J. Ammerlaan: Inst. Phys. Conf. Ser. Vol. 31 (1977), p.213.

Google Scholar

[4] N. H. Nikel (Ed. ), Hydrogen in Semiconductors II, in: Semiconductors and Semimetals, Vol. 61, Academic Press, San Diego, (1999).

Google Scholar

[5] T. Mchedlidze and M. Suezawa: Phys. Rev. B Vol. 70 (2004), 205203.

Google Scholar

[6] R. Jones, B.J. Coomer, J. P. Gross, B. Hourahine and A. Resende: Solid State Phenom. Vol 71 (2000), p.173.

Google Scholar

[7] S. H. Muller, G. M. Tuynman, E. G. Sieverts and C. A. J. Ammerlaan: Phys. Rew. B Vol. 25 (1982), p.25.

Google Scholar

[8] C. A. J. Ammerlaan: Solid State Phenom. Vol. 6 & 7 (1989), p.591.

Google Scholar