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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Determination of Effective Diffusion Coefficient...

Determination of Effective Diffusion Coefficient of Copper in Silicon by Diffusion from Bulk into the Polysilicon Backside

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Gettering and Defect Engineering in Semiconductor Technology XI

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

385-394

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.385

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Online since:

December 2005

Authors:

Mohammad B. Shabani, K. Hirano, Y. Shiina, T. Kihara, T. Shingyoji

Keywords:

AAS, Copper (Cu), Cz Boron-Doped Silicon, Effective Diffusion Coefficient, Gettering, ICP-MS, Poly-Silicon, Relaxation Gettering, Segregation Gettering

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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