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Effect of Self-Interstitials – Nanovoids Interaction on Two-Dimensional Diffusion and Activation of Implanted B in Si

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Abstract:

In this work, we investigate the effect of performing a high dose 20 keV He+ implant before the implantation of B at low energy (3 keV) in silicon and the subsequent thermal annealing at 800 °C. The implants were performed in laterally confined regions defined by opening windows in a SiO2 mask, in order to evidence the impact on a realistic configuration used in device fabrication. High resolution quantitative scanning capacitance microscopy (SCM) combined with cross-section transmission electron microscopy (XTEM) allowed to clarify the role of the voids distribution produced during the thermal annealing on the diffusion and electrical activation of implanted B in Si. Particular evidence was given to the effect of the uniform nanovoids distribution, which forms in the region between the surface and the buried cavity layer.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

395-400

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.395

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Online since:

December 2005

Authors:

Filippo Giannazzo, E. Bruno, S. Mirabella, G. Impellizzeri, E. Napolitani, Vito Raineri, F. Priolo, Daniel Alquier

Keywords:

Diffusion, Electrical Activation, Point Defect, Scanning Capacitance Microscopy, Void

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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