Paper Titles
A Stochastic Model for Current and Voltage Oscillations of the Si Electrode
p.1115
Ab Initio Study of Hydrogen Desorption from Hydrogenated Diamond (100) Surface
p.1119
Analysis of Modes in the Nanowire Cavity by FDTD Simulation
p.1125
Anisotropic Growth of Metal Chains on Anisotropic Substrate
p.1129
Contribution of Porous Pad to Chemical Mechanical Polishing
p.1133
Formation and Magic Number Characteristics of Cluster Configurations During Rapid Cooling Processes of Liquid Metals
p.1139
High Pressure on Asperity Surface Caused by Nano Particles’ Behavior in Non-Newtonian Slurries
p.1143
Kinetic Monte Carlo Simulation of Nucleation and Growth Behavior in Surfactant-Mediated Epitaxy
p.1149
Kinetic Monte Carlo Study of Void Distribution in Nickel Thin Film by Physical Vapor Deposition
p.1153

Contribution of Porous Pad to Chemical Mechanical Polishing

Article Preview

Abstract:

Chemical mechanical polishing (CMP) is a widely used technique to achieve high level of global and local planarity required in integrate circuit (IC) areas, which pleas for concentrate researches. A preliminary wafer-scale flow model for CMP is presented considering the roughness as well as the porosity and compressibility of the pad. Pressure distributions for three kinds of pad roughness: cosine shape, two-scale cosine shape and actual roughness were given with the help of numerical simulation by solving the corresponding two-dimensional slurry flow model. Pressure fluctuations and peaks can be seen from the results. The model predictions will be conducive to the removal rate and mass transport computation. The research is a qualitative one and will pave the way for further explorations of mechanisms of CMP process.

You might also be interested in these eBooks
Nanoscience and Technology View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Pages:

1133-1138

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.121-123.1133

Citation:

Cite this paper

Online since:

March 2007

Authors:

Chao Hui Zhang, Jian Bin Luo

Keywords:

Chemical Mechanical Polishing (CMP), Flow Models, Pad, Pressure Fluctuation, Roughness, Slurry

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2007 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] H. Lei, J.B. Luo. Wear. Vol. 257 (2004), p.461.

Google Scholar

[2] C.H. Zhang, J.B. Luo, S.Z. Wen. Lubrication Engineering. Vol. 4 (2004), p.31 (in Chinese).

Google Scholar

[3] J. Xu, J.B. Luo, X.C. Lu, C.H. Zhang, G.S. Pan. Chinese Sci. Bulletin. Vol. 49 (2004), p.1687.

Google Scholar

[4] C.H. Zhang, J.B. Luo, S.Z. Wen. Tsinghua Science and Technology. Vol. 9 (2004), p.270.

Google Scholar

[5] C.H. Zhang, J.B. Luo, S.Z. Wen. Acta Physica Sinica. 2005 (in press, in Chinese).

Google Scholar

[6] J. Tichy, J.A. Levert, L. Shan, S. Danyluk. J. Electrochem. Soc. Vol. 146 (1999), p.1523.

Google Scholar

[7] D.G. Thakurta, C.L. Borst, D.W. Schwendeman, R.J. Gutmann, W.N. Gill. Thin Solid Films. Vol. 366 (2000) p.181.

DOI: 10.1016/s0040-6090(00)00748-3

Google Scholar

[8] K.L. Johnson: Contact Mechanics (Cambridge University Press, U. K 1985).

Google Scholar

[9] C.H. Zhang, J.B. Luo, S.Z. Wen. Progress in Natural Science. Vol. 14 (2004), p.81.

Google Scholar