Laser Induced Surface Nanostructuring on Ultra-Thin Amorphous Si Films

X. Li; Z. Cen; J. Xu; X. Huang; Kai Chen

doi:10.4028/www.scientific.net/SSP.121-123.33

Paper Titles

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Shape Evolution of ZnO Nanostructures Modified by Trioctylphosphine Oxide
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Direct Wafer Bonding for Nanostructure Preparations
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Laser Induced Surface Nanostructuring on Ultra-Thin Amorphous Si Films
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Electrochemical Pore Etching in n- and p-Type Ge
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Synthesis and Characterization of Nanocrystalline TiO₂ Doped with 2 at.% Sc³⁺ and V⁵⁺ Ions
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Formation of α-Fe₂O₃ Nanoflakes by Heating Fe in Air
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Synthesis and Characterization of Silica Nanoparticles
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Laser Induced Surface Nanostructuring on Ultra-Thin Amorphous Si Films

Abstract:

A new approach to obtain Si nanostructures on insulating layer is proposed by laser irradiation on ultra-thin hydrogenated amorphous silicon (a-Si:H) films with subsequently thermal annealing. It was found that the surface nanostructuring was occurred when the laser fluence exceeded the threshold value as revealed by AFM images. The size and area density of formed Si nanostructures were depended on the laser fluence and film thickness while thermal annealing played an important role in the size and its distribution. The results showed that a high density (>1011cm-2) Si nanostructures with average lateral size of 10-20nm can be achieved by the present technology.