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The Growth of Transparent Conductive Al-Doped ZnO Thin Films at Room Temperature

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Abstract:

High-quality transparent conductive Al-doped ZnO (AZO) thin films were deposited by pulsed laser deposition on quartz glass substrates at room temperature. We varied the growth condition in terms of oxygen pressure. The structure and electrical and optical properties of the as-grown AZO films were mainly investigated. The AZO films formed at room temperature showed a low electrical resistivity of 3.01×10-4 ) cm, a carrier concentration of 1.12×1021 cm-3 and a carrier mobility of 18.59 cm2/Vs at an oxygen pressure of 10 mTorr. A visible transmittance of above 83% was obtained. The present results suggest that optimized AZO films should be very useful and effective for flexible display, top emission type of OLEDs and for various other kinds of optoelectronic devices such as flexible solar cell or passive photo device.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

211-214

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.211

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Online since:

June 2007

Authors:

Sang Moo Park, Takashi Tomemori, Tomoaki Ikegami, Kenji Ebihara

Keywords:

Al-Doped ZnO, Electric and Optical Properties, PLD, Room Temperature

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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