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Prospects of Potential Semiconductor Spin Detectors

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Abstract:

We review our recent experimental findings by optical orientation spectroscopy that show efficient spin relaxation within semiconductor spin detectors to be an important factor limiting efficiency of spin injection in spin light-emitting structures based on ZnCdSe/ZnMnSe and InGaN/GaMnN. We provide evidence for the physical mechanism responsible for the observed efficient spin relaxation that accompanies momentum and energy relaxation of excitons/carriers. These findings call for increasing efforts in suppressing spin relaxation in spin detectors.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

839-842

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.839

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Online since:

June 2007

Authors:

W.M. Chen, I.A. Buyanova, Y. Oka, C.R. Abernathy, Stephen J. Pearton

Keywords:

InGaN, Magneto Optic, Quantum Well, Spin Detector, Spin Dynamics, Spin Relaxation, Spin-LED, Spintronic, Ultrafast Laser Spectroscopy, ZnCdSe

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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