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Photoinduced Variation of Capacitance Characteristics of MDS Structures with Three-Layer SiNx Dielectrics

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Abstract:

Characterisation of three-layer dielectric embedded into MDS-structure (Metal- Dielectric-Silicon) was provided in the dark and under light illumination. In the dark, increasing of differential capacitance, simultaneously, with variation of differential conductivity of MDSstructures was detected. In the light strong changing of capacitance part of impedance was firstly observed, demonstrating decreasing almost to zero values and restoring up to maximal values in narrow bang of voltage applied. Variation of capacitance exceeds significantly so called dielectric layer capacitance, what interpreted as carriers exchanging between substrate and electronic states in SiNx probably due to three-layered kind of its nature.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

461-466

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.461

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Online since:

October 2007

Authors:

Sofia A. Arzhannikova, M.D. Efremov, Vladimir A. Volodin, G.N. Kamaev, D.V. Marin, V.S. Shevchuk, S.A. Kochubei, A.A. Popov, Yu. A. Minakov

Keywords:

Non-Volatile Memory (NVM), Photoluminescence (PL), Raman Scattering, Silicon Nanocrystals

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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References

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