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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Defects Spectroscopy in ß-Ga2O3

Defects Spectroscopy in ß-Ga₂O₃

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1473-1478

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1473

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Online since:

December 1997

Authors:

B.K. Meyer, U. Leib, A. Hofstätter, C. Krummel, D. Kohl

Keywords:

Magnetic Resonance, ß-Ga₂O₃, Transition Metal, Vacancy

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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