Fabrication of OTFT Array with Coated Thin Film Dielectric and Printed Electrodes by Using Microcontact Printing

Jeong Dai Jo; Taik Min Lee; Chung Hwan Kim; Kwang Young Kim; Eung Sug Lee; Masayoshi Esashi

doi:10.4028/www.scientific.net/AMR.26-28.661

Paper Titles

Low-Temperature Deposition of Amorphous Carbon Films for Surface Passivation of Carbon-Doped Silicon Oxide
p.645

Preparation and Characterization of Doped Nanometer TiO₂
p.649

Effect of Residual Stress on P Doped Nano-Crystalline Silicon Deposited by HWCVD Films
p.653

MOCVD Growth of SiC Nanowires Aiming at the Control of their Shape
p.657

Fabrication of OTFT Array with Coated Thin Film Dielectric and Printed Electrodes by Using Microcontact Printing
p.661

Synthesis and Characterization of Y₃Al₅O₁₂ Nanocrystals
p.667

Preparation of Nano-Particles of Metal Oxides via a Novel Solid-Liquid Mechanochemical Reaction Technology
p.671

Crystal Growth in Amorphous Binary Alloys of Zr-Ni System
p.675

Effect of Magnetic Field on Crystallization of Fe-Based Metallic Glass
p.679

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 26-28Fabrication of OTFT Array with Coated Thin Film...

Fabrication of OTFT Array with Coated Thin Film Dielectric and Printed Electrodes by Using Microcontact Printing

Abstract:

The gate, source, and drain electrodes of organic thin-film transistor(OTFT) to use as a switching device for a flexible display was fabricated in microcontact printing process with hard poly(dimethylsiloxane)(h-PDMS) stamp. The OTFT with thin-film dielectric layer of parylene-C(4300Å, 5000Å, 6500Å, 7500Å, and 9000Å) were formed using special coating system, and organic semiconductor layer was ink-jet printing process at room temperature. The microcontact printing process using self-assembled monolayer(SAM) and h-PDMS stamp made it possible to fabricate OTFT with channel length down to 600nm, fabricated thin film electrode of Au/Cr (100nm/5nm), and reduced the fabrication process by 20steps compared with photolithography process. Since the fabrication process was done in room temperature, there was no appeared such as pattern shrinkage, pattern transformation and bending problem.