Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging

Joshua D. Caldwell; Laurent Lombez; Amaury Delamarre; Jean Francois Guillemoles; Brice Bourgoin; Brett A. Hull; Marc Verhaegen

doi:10.4028/www.scientific.net/MSF.717-720.403

Paper Titles

Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes
p.387

Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers
p.391

Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC
p.395

Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density
p.399

Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging
p.403

Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates
p.407

Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals
p.411

Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping
p.415

On the Twin Boundary Propagation in (111) 3C-SiC Layers
p.419

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Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging

Abstract:

Over the past decade, improvements in silicon carbide growth and materials has led to the development of commercialized unipolar devices such as Schottky diodes and MOSFETs, however, much work remains to realizing the goal of wide-scale commercialization of both unipolar and bipolar devices such as pin diodes or IGBTs, for high applications requiring high powers, operating in elevated temperatures or radiation environments or for many fast switching applications. Despite the great strides that have been made in reducing extended and point defect densities during this period, such defects still remain and with the push to lower off-cut angle substrates are in many cases seeing increases in prevalence. Thus, spectroscopic and imaging techniques for locating and identifying these defects are in high demand. Luminescence imaging and spectroscopy have both been utilized heavily in such work, yet simultaneously obtaining corresponding spectroscopic and spatial information from such defects is problematic. Here we report on hyperspectral imaging of electroluminescence from SiC pin diodes, whereby a stack of luminescence images are collected over a wide spectral range (400-900 nm), thereby providing the ability to both image distinct features and identify their corresponding spectral properties. This process is also equally applicable to collecting either photo- or electroluminescence from other materials or devices emitting in either the UV-Vis or NIR spectral range, as well as to reflectance, transmission or other imaging techniques.