Silicon Carbide and Related Materials 2011
| Paper Title | Page |
|---|---|
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Preface, Sponsors, Committes and Overview
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5 |
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Status of Large Diameter SiC Single Crystals Authors: Avinash K. Gupta, Ping Wu, Varatharajan Rengarajan, Xue Ping Xu, Murugesu Yoganathan, Christ Martin, Ejiro Emorhokpor, Andy Souzis, Ilya Zwieback, Tom Anderson |
3 |
|
TSD Reduction by RAF (Repeated a-Face) Growth Method Authors: Yasushi Urakami, Itaru Gunjishima, Satoshi Yamaguchi, Hiroyuki Kondo, Fusao Hirose, Ayumu Adachi, Shoichi Onda |
9 |
|
Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals Authors: Hiroshi Tsuge, Shinya Sato, Masakazu Katsuno, Tatsuo Fujimoto, Wataru Ohashi |
13 |
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Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter Authors: Jong Hwi Park, Tae Kyoung Yang, Il Soo Kim, Won Jae Lee, Im Gyu Yeo, Tai Hee Eun, Seung Suk Lee, Jang Yul Kim, Myoung Chul Chun |
17 |
|
Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals Authors: Tatsuo Fujimoto, Noboru Ohtani, Shinya Sato, Masakazu Katsuno, Hiroshi Tsuge, Wataru Ohashi |
21 |
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Analysis of Growth Velocity of SiС Growth by the Physical Vapor Transport Method Authors: Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano, Shin Ichi Nishizawa |
25 |
|
Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method Authors: Emil Tymicki, Krzysztof Grasza, Katarzyna Racka, Tadeusz Łukasiewicz, Miroslaw Piersa, Kinga Kościewicz, Dominika Teklińska, Ryszard Diduszko, Paweł Skupiński, Rafał Jakieła, Jerzy Krupka |
29 |
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Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy Authors: Andrew J. Trunek, Philip G. Neudeck, Andrew A. Woodworth, J. Anthony Powell, David J. Spry, Balaji Raghothamachar, Michael Dudley |
33 |
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Synthesis and Purification of Silicon Carbide Powders for Crystal Growth Authors: Ta Ching Hsiao, Sheng Tsao |
37 |
