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Articles by author: A. Kaniava

• A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p81)
• Characterisation of High-Energy Proton Irradiation Induced Recombination Centers in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p371)
• Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p229)
• Positron Annihilation Lifetime Study of Irradiated and Deformed Ni
  Published in: Positron Annihilation - ICPA-11 (p430)
• Positron Annihilation Studies of Defects in Ion Implanted Palladium
  Published in: Positron Annihilation - ICPA-12 (p156)