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Papers by Author: A. Polity

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Study of Irradiation-Induced Vacancy Defects and Shallow Positron Traps in Silicon

Authors: A. Polity, S. Huth, Reinhard Krause-Rehberg

602

Vacancy Type Defects inGaAs After Electron Irradiation Studied by Positron Lifetime Spectroscopy

Authors: A. Polity, C. Nagel, Reinhard Krause-Rehberg

1249

Study of The Compensating Centres in GaAs:Te by Positron Annihilation

Authors: Reinhard Krause-Rehberg, G. Dlubek, A. Polity

1649

Hg Vacancies in Hg_1-xCd_xTe Studied by Positron Annihilation

Authors: Reinhard Krause-Rehberg, Th. Abgarjan, A. Polity, M. Neubert

1285

Experimental Determination of the Specific Positron Trapping Rates in Semiconductors

Authors: Reinhard Krause-Rehberg, A. Polity, Th. Abgarjan

427

Investigations of Vacancy Defects in CdTe by Means of Positron Annihilation

Authors: A. Polity, Th. Abgarjan, Reinhard Krause-Rehberg

473

Relation between Dislocation Motion and Formation of Intrinsic Point Defects

Authors: H.S. Leipner, Reinhard Krause-Rehberg, A. Polity, Th. Drost, H. Alexander

1589

Vacancy Related Metastable Defects in III-V Semiconductors - A Study of the EL2 and DX Center by Positron Annihilation, Photoconductivity and Infrared Spectroscopy

Authors: Reinhard Krause-Rehberg, A. Polity, Th. Drost, G. Roos, Gerhard Pensl, D. Volm, B.K. Meyer

1099

Study of Vacancy Defects in II-VI Compouds by Means of Positron Annihilation

Authors: Reinhard Krause-Rehberg, Th. Drost, A. Polity

429

Point Defects in GaP Studied by Correlated Positron Lifetime and Hall Measurements

Authors: A. Polity, R. Krause

1173

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