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Articles by author: A. Polity

• Experimental Determination of the Specific Positron Trapping Rates in Semiconductors
  Published in: Positron Annihilation - ICPA-10 (p427)
• Hg Vacancies in Hg_1-xCd_xTe Studied by Positron Annihilation
  Published in: Defects in Semiconductors 18 (p1285)
• Investigations of Vacancy Defects in CdTe by Means of Positron Annihilation
  Published in: Positron Annihilation - ICPA-10 (p473)
• Point Defects in GaP Studied by Correlated Positron Lifetime and Hall Measurements
  Published in: Positron Annihilation - ICPA-9 (p1173)
• Relation between Dislocation Motion and Formation of Intrinsic Point Defects
  Published in: Defects in Semiconductors 17 (p1589)
• Study of Deformed Si and Ge by Positron Lifetime Measurements
  Published in: Positron Annihilation - ICPA-9 (p1101)
• Study of Irradiation-Induced Vacancy Defects and Shallow Positron Traps in Silicon
  Published in: Positron Annihilation - ICPA-11 (p602)
• Study of The Compensating Centres in GaAs:Te by Positron Annihilation
  Published in: Defects in Semiconductors 18 (p1649)
• Study of Vacancy Defects in II-VI Compouds by Means of Positron Annihilation
  Published in: Defects in Semiconductors 17 (p429)
• Vacancies in II-VI- and IV-VI Compound Semiconductors Studied by Positron Lifetime Spectroscopy
  Published in: Positron Annihilation - ICPA-9 (p333)
• Vacancy Related Metastable Defects in III-V Semiconductors - A Study of the EL2 and DX Center by Positron Annihilation, Photoconductivity and Infrared Spectroscopy
  Published in: Defects in Semiconductors 17 (p1099)
• Vacancy Type Defects inGaAs After Electron Irradiation Studied by Positron Lifetime Spectroscopy
  Published in: Defects in Semiconductors 18 (p1249)