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Articles by author: Alain Jacques

• In Situ Measurement of Internal Stresses and Strain Rates by High Energy X-Ray Diffraction during High Temperature Mechanical Testing
  Published in: Euro Superalloys 2010 (p48)
• Anisotropy of Grain Boundary Migration Observed in Situ by Synchrotron Radiation
  Published in: Recrystallization and Grain Growth (p911)
• Comparison of Tension and Compression Deformation of Fe-Si Bicrystals – X-Ray Topography Observation
  Published in: Intergranular and Interphase Boundaries in Materials (p377)
• Diffraction Profile, Strain Distribution and Dislocation Densities during Stage II Creep of a Superalloy
  Published in: Euro Superalloys 2010 (p37)
• Dislocation Interaction with a Σ=3 Grain Boundary Observed by in situ TEM
  Published in: Intergranular and Interphase Boundaries in Materials (p397)
• Effective Stresses and Plastic Strain Rates in a Superalloy: a High Temperature In Situ Study by Synchrotron X-Ray TCD
  Published in: Residual Stresses VII, ECRS7 (p775)
• Evaluation of Sputtered Tungsten as Diffusion Barrier Materials for Copper
  Published in: Diffusion in Materials DIMAT 1996 (p1285)
• Grain Boundaries and Propagation of Slip Bands
  Published in: Intergranular and Interphase Boundaries in Materials (p373)
• Grain Boundary Fracture and Plasticity in ∑=25 Bicrystals of Silicon
  Published in: Intergranular and Interphase Boundaries in Materials (p153)
• Influence of the Dissociation into Shockley Partials on the Dislocation Transmission across [011] Tilt Grain Boundaries in Elemental Semiconductors
  Published in: Intergranular and Interphase Boundaries in Materials (p491)
• In-Situ Analysis of Microstress and Texture Development during Tensile Deformation of MMCs at Room Temperature and at Elevated Temperatures Using Synchrotron Radiation
  Published in: Residual Stresses VI, ECRS6 (p535)
• Investigation of the Mechanical Properties of Thin Films by Bulge Test
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p477)
• Symmetric (011)Tilt Grain Boundaries in Si and Ge: Interfacial Dislocation Concept
  Published in: Intergranular and Interphase Boundaries in Materials (p73)
• Velocities of Glissile D.S.C. Dislocations in A Σ = 9 (-1 2-2)Grain Boundary in Silicon
  Published in: Intergranular and Interphase Boundaries in Materials (p333)