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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Andreas Hoffmann
29 papers on 2 pages:
1
[2]
[next]
Absorption as Optical Access to Accepptor Concentrations and Compensation Mechanism in ZnSe Epilayers
Published in:
II-VI Compounds and Semimagnetic Semiconductors
(p259)
Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO
2
and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy
Published in:
Silicon Carbide and Related Materials - 1999
(p1483)
Degenerate-Four-Wave-Mixing at the Nitrogen Acceptor Bound Exiton in ZnSe Epilayers
Published in:
II-VI Compounds and Semimagnetic Semiconductors
(p283)
Determination of the Elastic Behaviour of Carbon-Reinforced Carbon Materials Using Laser-Ultrasound and Theoretical Modeling
Published in:
Nondestructive Characterization of Materials VII
(p227)
Energy Transfer between Fe
2+
Centers in Polymorphic ZnS
Published in:
Defects in Semiconductors 17
(p411)
Evolution of Microstructure during Hot Deformation of the PM Molybdenum Alloy TZM
Published in:
THERMEC 2006
(p2725)
Excitonic Fine Structure and High Density Effects in GaN
Published in:
Silicon Carbide, III-Nitrides and Related Materials
(p1259)
Excitonic Quantum Efficiency of GaN
Published in:
Silicon Carbide, III-Nitrides and Related Materials
(p1283)
Fine Structure of the (Fe
2+
, h) Bound States in GaP and InP
Published in:
Defects in Semiconductors 17
(p311)
Impact Bending Tests on Selected Refractory Materials
Published in:
1st International Conference On New Materials for Extreme Environment
(p101)
Impact of Epitaxial Lateral Overgrowth on the Recombination Dynamics in GaN Determined by Time Resolved Micro-Photoluminescence Spectroscopy
Published in:
Silicon Carbide and Related Materials - 1999
(p1575)
Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties
Published in:
Silicon Carbide, III-Nitrides and Related Materials
(p1291)
Ligand Induced Isotope Shifts of Transition Metal Centers in ZnO
Published in:
Defects in Semiconductors 17
(p453)
Local Vibrational Modes at Transition-Metal Impurities in Hexagonal AlN and GaN Crystals
Published in:
Defects in Semiconductors 19
(p1173)
Local Vibrational Modes of 3d Elements in Wurtzite Type ZnO and GaN Crystals
Published in:
Defects in Semiconductors 18
(p1571)
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