Papers by Author: B.X. Ma

Abstract: In order to increase the material removal rate of silicon wafer, composite abrasives slurry was used in CMP. Zeta potential of polymer particle was measured and interaction potential energy between silica abrasives and polymer particles in slurry were analyzed and calculated. Adsorptions between silica abrasives and polymer particles were observed with TEM. CMP experiments had been taken to analyze the effects of polishing parameters (the concentration of colloidal silica and polymer particle, the pressure and the speed of polishing) on the material removal rate. The mechanism of polymer particle in polishing was elaborated. Experimental results indicated that PS, PMMA and BGF polymer particles could adsorb silica abrasives in slurry. Silica shell/PS core, silica shell/PMMA core and silica shell/BGF core particles could be used to formulate composite abrasives slurries. The material removal rate with composite abrasives slurry was higher than that of single abrasive slurry. The maximum material removal rate was obtained with silica shell/BGF core composite abrasives slurry.

Abstract: In order to increase the material removal rate of silicon wafer, composite abrasives slurry was used in CMP. The mechanism of interaction between silica abrasives and polymer particles was analyzed. Small silica abrasives were seen to attach onto the surface of the polymer particles. Composite abrasives slurry was obtained by adding polymer particles into single abrasive slurry. Three key parameters, the concentration of colloidal silica, the concentration of polymer particle and the speed of polishing, which influence the material removal rate of silicon wafer were analyzed by Taguchi method and the optimal parameters were obtained. Experimental results indicated that the maximum material removed rate of 353nm/min was obtained when optimal craft parameters of 5% colloidal silica, 3% polymer particle, 50rpm plate and carrier rotation speed were selected.

Abstract: In this paper, mixed slurries containing silica abrasives and polystyrene (PS) polymer particles in deionized water at pH 10.5 have been evaluated for silicon wafer polishing. By applying the theory of electric double layer model, the effect of the particle interactions in mixed slurry is investigated. Zeta potential measurements and TEM images have been used to show the formation of composite particles. The polishing mechanism with composite particles slurries is discussed. Polishing experiments with the mixed slurries formed by coating smaller (~30nm) abrasives onto softer and larger (~2000nm) polymer particles have shown the superior characteristic with higher removal rate and high surface quality.