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Articles by author: Balaji Raghothamachar

• Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p327)
• Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density
  Published in: Silicon Carbide and Related Materials 2009 (p291)
• Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC)
  Published in: Solidification and Gravity IV (p117)
• Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults
  Published in: Silicon Carbide and Related Materials 2011 (p347)
• Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a
  Published in: Silicon Carbide and Related Materials 2010 (p269)
• Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy
  Published in: Silicon Carbide and Related Materials 2011 (p33)
• Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics
  Published in: Silicon Carbide and Related Materials 2011 (p1287)
• Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy
  Published in: Silicon Carbide and Related Materials 2009 (p295)
• Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p1513)
• Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p1521)
• Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p343)
• The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p1497)