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Articles by author: C.C. Ling

• A Monte-Carlo Study of Defect Sensitivity Limits in Positron Lifetime Spectroscopy
  Published in: Positron Annihilation - ICPA-12 (p692)
• A Positron Annihilation Study of Compensation Defects Responsible for Conduction- Type Conversions in LEC-Grown InP
  Published in: Positron Annihilation - ICPA-12 (p153)
• Changes in the Positron-Electron Momentum Distribution in GaAs Brought about by Chopped Light
  Published in: Positron Annihilation - ICPA-12 (p114)
• Dynamic Studies on Cu-Based Shape Memory Alloy Using Positron Lifetime Spectroscopy
  Published in: Positron Annihilation - ICPA-11 (p454)
• Electrically Induced Metastability in SI-GaAs Studied by Positron Lifetime Spectroscopy
  Published in: Positron Annihilation - ICPA-12 (p108)
• Identities of the Deep Level Defects E₁/E₂ in 6H Silicon Carbide
  Published in: Positron Annihilation - ICPA-13 (p135)
• Investigation of EBC Polymer Coating Using a Monoenergetic Positron Beam
  Published in: Positron Annihilation - ICPA-12 (p508)
• Microstructure of Carbon Filled HDPE/EPDM Composites Studied by Positron Annihilation Spectroscopy
  Published in: Positron Annihilation - ICPA-13 (p358)
• Positron Annihilation Spectroscopic Studies of 6H Silicon Carbide
  Published in: Positron Annihilation - ICPA-12 (p120)
• Positron Mobility and Interface Defect Studies in Semi-Insulating GaAs Using the Lifetime Technique
  Published in: Positron Annihilation - ICPA-10 (p517)
• Positron Mobility in Gallium Arsenide
  Published in: Positron Annihilation - ICPA-9 (p591)
• Positron Mobility in Semi-Insulating 4H-SiC
  Published in: Positron Annihilation - ICPA-11 (p260)
• Recent Advances in Defect Characterization in 6H-SiC Using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy
  Published in: Defects and Diffusion in Semiconductors (p1)
• Space Charge Transient at the Au/InP:Fe Interface Investigated by the Doppler Shift of Annihilation Radiation Technique
  Published in: Positron Annihilation - ICPA-11 (p557)