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Articles by author: D. Kurt Gaskill

• 4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile
  Published in: Silicon Carbide and Related Materials 2008 (p829)
• 4H-SiC Single Photon Avalanche Diode for 280nm UV Applications
  Published in: Silicon Carbide and Related Materials 2007 (p1203)
• 4kV Silicon Carbide MOSFETs
  Published in: Silicon Carbide and Related Materials 2010 (p637)
• A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy
  Published in: Silicon Carbide and Related Materials 2009 (p271)
• Basal Plane Dislocation Mitigation in 8º Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2008 (p61)
• CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2009 (p211)
• Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)
  Published in: Silicon Carbide and Related Materials 2006 (p235)
• Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2010 (p63)
• Etching of 4° and 8° 4H-SiC Using Various Hydrogen-Propane Mixtures in a Commercial Hot-Wall CVD Reactor
  Published in: Silicon Carbide and Related Materials 2006 (p513)
• Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2007 (p317)
• Graphene Formation on SiC Substrates
  Published in: Silicon Carbide and Related Materials 2008 (p211)
• Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas
  Published in: Silicon Carbide and Related Materials 2010 (p119)
• High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl
  Published in: Silicon Carbide and Related Materials 2007 (p103)
• Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes
  Published in: Silicon Carbide and Related Materials 2007 (p481)
• In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD
  Published in: Silicon Carbide and Related Materials 2006 (p125)