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Articles by author: D. Kurt Gaskill

• In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD
  Published in: Silicon Carbide and Related Materials 2006 (p125)
• Influence of Intercalated Silicon on the Transport Properties of Graphene
  Published in: Silicon Carbide and Related Materials 2010 (p793)
• Microhardness of 6H- and 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2008 (p323)
• Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p347)
• Observations on C-Face SiC Graphene Growth in Argon
  Published in: Silicon Carbide and Related Materials 2010 (p789)
• Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes
  Published in: Silicon Carbide and Related Materials 2010 (p551)
• Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy
  Published in: Silicon Carbide and Related Materials 2009 (p315)
• Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
  Published in: Silicon Carbide and Related Materials 2009 (p633)
• Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2009 (p203)
• Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films
  Published in: Defects in Semiconductors 18 (p37)
• Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p105)