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Articles by author: D. Volm

• Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations
  Published in: Silicon Carbide and Related Materials - 1999 (p559)
• Ni Related Centers in Synthetic Diamond
  Published in: Defects in Semiconductors 18 (p79)
• Optically Defected Cyclotron Resonance Investigation of Epitaxially Grown ZnSe
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p307)
• The Effective Mass Donor in Galliumnitride
  Published in: Defects in Semiconductors 18 (p17)
• Vacancy Related Metastable Defects in III-V Semiconductors - A Study of the EL2 and DX Center by Positron Annihilation, Photoconductivity and Infrared Spectroscopy
  Published in: Defects in Semiconductors 17 (p1099)
• Zeeman Spectroscopy on the Nitrogen Acceptor-Bound Exciton in Epitaxial ZnSe
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p303)