Papers by Author: Dae Wook Kim

Abstract: Although the electron-beam (e-beam) inspection can find the non-visual defects in the semiconductor devices under the fabrication procedure, it has a problem of low inspection speed. To resolve this problem, in this work, we have demonstrate the low-energy e-beam inspection using a tiny microcolumn as the e-beam source. The experimental result indicates that the non-visual defects in the wafer can be easily identified by measuring the e-beam current at the backside of the wafer. Since it is not difficult to make the multiple e-beam sources by packing many microcolumns, we can enhance the inspection many times by using the microcolumn e-beam sources.

Abstract: The inspection of the TFT device for the LCD panel has been usually carried out by the large-scale electron column where the kinetic energy of the electron beam is higher than 10 kV, which has many disadvantages for the inspection. In this work, we replaced the bulky electron column with a tiny microcolumn and carried out the inspection of the TFT device. The result shows that the low-energy e-beam inspection can clearly observe the physical defects of the devices and also identify the abnormal electrical behavior caused by the defects in the device.

Abstract: We have annealed the thin layer of the amorphous silicon (a-Si) using the Q-swtiched Nd:YAG laser pulses in order to transform the a-Si into polycrystalline silicon (poly-Si) and investigated the crystalline structures of the poly-Si. Before illuminating the light to the layer, the frequency of the laser was doubled through the second harmonic generation (SHG) process to enhance the absorption efficiency of the optical energy. When the optical energy was higher than 500 mJ/cm², we could obtain the micro-crystalline structure with grain size as large as 500 nm.

Abstract: The electron beam lithography has been paid great attention as a future lithography technology for the patterning of extremely fine structures. Generally the e-beam lithography means high-energy e-beam lithography where the kinetic energies of electrons are rather high(10~100 keV). Although the high-energy e-beam technology is mature and being used in semiconductor industry, the low-energy microcolumn lithography(LEML) has many great advantages as a next-generation technology, which explains the active research on the subject these days. In this work, we developed a new method to recognize the registration marks in LEML. With this novel method, there is no need to supply the bias to the mark electrodes, which remarkably simplifies the fabrication process of IC devices.

Abstract: The alignment precision of the electron lenses is one of the most critical factors that determine overall performance of the microcolumn system including the image resolution and aberration. Since the lens apertures are usually as small as 5 ~ 300 μm, the alignment is difficult to carry out, even if the expensive and complicated aligner is used. In this work, we have developed a novel alignment method using laser diffraction pattern, with which we can easily obtain high-precision alignment. The images of Cu grid (mesh# 1000) and carbon nanotubes (200-nm diameter) taken by the microcolumn fabricated by the new alignment scheme has confirmed that the new method was very simple and useful.

Abstract: Recently, the micro-column has been intensively studied as a potential candidate for next-generation lithography with high-throughput capability. The micro-column has a simple structure with an electron emitter, micro-lenses, a double octupole deflector, and an Einzel lens. The structure and performance of the micro-column are dependent on the characteristics of the electron emitter. The electron emitter should have several prerequisites such as stable emission of electrons, high brightness and long lifetime. It is also necessary for the emitted electrons to have sufficiently low kinetic energy, which can be achieved by using a very sharp emission tip. In this work, we made an extremely sharp tip by electro-chemically etching the tungsten wire in 10 % KOH solution. From the Fowler-Nordheim plot, the effective radius of the tip was found to be as small as ~12 nm, which is consistent with the value measured by SEM. We also discovered that the stability of emission can be enhanced very much through thermal treatment of the tip end by irradiating the Nd:YAG laser pulse

Abstract: The magnetic domain refinement was carried out by laser pulse scribing in order to reduce the core loss of SiFe. The laser pulses were generated by a Q-switched Nd:YAG laser, and the optical frequencies of the laser pulses were altered by using the SHG and the THG. The core losses were measured and analyzed to find optimal parameters of the laser treatment. The laser beam was focused with a spot size of 0.2 mm, and pulse energy of 10~30 mJ and the lines were scribed with a period of ~5 mm. The core loss was improved up to 19 % with the THG of Q-switched Nd:YAG laser in 3% SiFe.