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Articles by author: Darren M. Hansen

• A Study of Nitrogen Incorporation in PVT Growth of n⁺ 4H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p59)
• Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p327)
• Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2006 (p323)
• Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density
  Published in: Silicon Carbide and Related Materials 2009 (p291)
• Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults
  Published in: Silicon Carbide and Related Materials 2011 (p347)
• Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a
  Published in: Silicon Carbide and Related Materials 2010 (p269)
• Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 10¹⁶ and 10¹⁷ cm^-3
  Published in: Silicon Carbide and Related Materials 2007 (p449)
• SiC Substrate Doping Profiles Using Commercial Optical Scanners
  Published in: Silicon Carbide and Related Materials 2005 (p725)
• Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p343)