Papers by Author: Dimitri I. Cherednichenko

Paper TitlePage

Formation of Stacking Faults in Diffused SiC p+/n-/n+ and p+/p-/n+ Diodes
Authors: Stanislav I. Soloviev, Dimitri I. Cherednichenko, Tangali S. Sudarshan
525
Modification of 6H-SiC Surface Defect Structure during Hydrogen Etching
Authors: Robert T. Bondokov, Naveen Tipirneni, Dimitri I. Cherednichenko, Tangali S. Sudarshan
431
Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth
Authors: Roman Drachev, Dimitri I. Cherednichenko, I.I. Khlebnikov, Yuri I. Khlebnikov, Tangali S. Sudarshan
99
Influence of the Crystal Thickness on the SiC PVT Growth Rate
Authors: Dimitri I. Cherednichenko, Yuri I. Khlebnikov, Roman Drachev, I.I. Khlebnikov, Tangali S. Sudarshan
95
Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes
Authors: I.I. Khlebnikov, Dimitri I. Cherednichenko, Yuri I. Khlebnikov, Tangali S. Sudarshan
59
An Analytical Study of the SiC Growth Process from Vapor Phase
Authors: Dimitri I. Cherednichenko, Yuri I. Khlebnikov, I.I. Khlebnikov, Stanislav I. Soloviev, Tangali S. Sudarshan
35
Showing 1 to 6 of 6 Paper Titles