Papers by Author: Dorothée Dorner

Abstract: Compression tests were performed on Fe-3%Si specimens with few grains. The deformation microstructure and microtexture were investigated by electron backscatter diffraction (EBSD) and related to the initial crystal orientation and grain boundary characteristics. Groups of microbands were found that are characterised by a periodic change in crystal orientation, shear at the grain boundary, and the formation of new grains. It is supposed that these microband groups represent an early stage of microshear band development.

Abstract: This study aims to analyze the potential of grain boundary corners (GBCs) as nucleation sites of bcc precipitates in an fcc matrix. By combined serial sectioning and electron backscatter diffraction analysis, the crystallography of GBCs and GBC precipitates was analyzed in a Co-Fe alloy.

Abstract: A Goss-oriented single crystal was cold rolled up to 89 % thickness reduction, and subsequently annealed at 550°C or 850°C. During deformation most of the initially Goss-oriented material rotated into the two symmetrical {111}<112> orientations. In addition, Goss regions were observed related to microbands or microshear bands. Goss regions in microshear bands formed during straining, whereas Goss regions between microbands were retained from the initial Goss orientation. The recrystallisation texture for annealing temperatures of both 550°C and 850°C is characterised by a Goss texture. However, the origin of the Goss recrystallisation nuclei appeared to be different for the different annealing conditions. In the material annealed at 550°C, the Goss texture originated from the Goss regions in the microshear bands. In contrast, for an annealing temperature of 850°C, the Goss grains between the microbands are likely to form recrystallisation nuclei.

Abstract: A silicon steel single crystal with initial Goss orientation, i.e. the {110}<001> orientation, was cold rolled up to 89 % thickness reduction. Most of the crystal volume rotates into the two symmetrical equivalent {111}<112> orientations. However, a weak Goss component is still present after high strain, although the Goss orientation is mechanically instable under plane strain loading. Two types of Goss-oriented crystal volumes are found in the highly deformed material. We suggest that their origin is different. The Goss-oriented regions that are observed within shear bands form during the cold rolling process. In contrast, those Goss-oriented crystal volumes that are found inside of microbands survive the cold rolling.

Abstract: An initially Goss-oriented ({110}<001> preferred crystal orientation) FeSi single crystal was cold rolled up to 89 % reduction in thickness. The microstructure and texture of shear bands, which develop at strains higher than 70 %, were investigated by the EBSD (electron backscatter diffraction) technique. The texture components within and ouside of the shear bands are the two symmetrical {111}<112> orientations and the {110}<001> orientation. We conclude that crystallographic slip is the deformation mechanism that is active both within and outside of the shear bands.

Abstract: A silicon steel single crystal with {110}<001> Goss orientation was cold rolled up to 89 % thickness reduction and subsequently annealed. The evolution of the macroscopic cold rolling texture was investigated by x-ray diffraction. Local orientation relationships and the microstructure around and within Goss grains of deformed and annealed samples were analysed using the electron backscatter diffraction (EBSD) technique. During cold rolling a texture consisting of two strong {111}<112> components and a minor {110}<001> Goss component develops. After primary recrystallisation the texture is characterized by a strong Goss component. Goss-oriented grains that remain after high deformation are considered to be the origin for the primary recrystallisation texture.