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Articles by author: Enrique Calleja

• Blue-U.V. Homojunction GaN LEDs Fabricated by MOVPE
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1425)
• Carrier Capture Processes at DX Centers
  Published in: Physics of DX Centers in GaAs Alloys (p99)
• Deep Level Transient Spectroscopy of DX Centers
  Published in: DX Centers (p75)
• DX Centers in Reduced Dimensionality n-Type AlGaAs Structures
  Published in: Defects in Semiconductors 17 (p623)
• Effect of the Host Band Structure on Capture and Emission Processes at DX Centers in AlGaAs
  Published in: Defects in Semiconductors 14 (p417)
• Fine Structure, Alloy Broadening and Multi-Peaks in DX Center Spectroscopy
  Published in: Defects in Semiconductors 15 (p1115)
• Incorporation of Be Into In_x Ga_1-x As (0.004≤x≤0.17) Studied by Photoluminescence and Resonant Raman Spectroscopy of Local Vibrational Modes
  Published in: Defects in Semiconductors 17 (p241)
• Minimizing DX Center Effects in AlGaAs Based Devices
  Published in: DX Centers (p135)
• Resonant Raman Scattering in Strained and Relaxed In_xGa_1-xN/GaN Multiple Quantum Wells
  Published in: Current Research in Advanced Materials and Processes (p19)
• Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p1003)
• Thermal Emission Processes from DX Centers
  Published in: Physics of DX Centers in GaAs Alloys (p73)
• Trapping Characteristics and Analysis of Te-Related DX Centers in AlGaAs and GaAsP
  Published in: Defects in Semiconductors 14 (p411)