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Articles by author: Etienne Bustarret

• 3C-SiC Pseudosubstrates for the Growth of Cubic GaN
  Published in: Silicon Carbide and Related Materials - 1999 (p1467)
• Analysis of SiC Islands Formation during First Steps of Si Carbonization Process
  Published in: Silicon Carbide and Related Materials 2004 (p555)
• Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy
  Published in: Silicon Carbide and Related Materials 2003 (p277)
• Planar Defects, Voids and their Relationship in 3C-SiC Layers
  Published in: Silicon Carbide and Related Materials 2004 (p189)