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Articles by author: Eugene B. Yakimov

• About the Electrical Properties of Oxygen Phases Segregated by Annealing Cz Silicon in the 600-800°C Range
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p327)
• Annihilation of Self-Interstitials by Dislocations in Silicon as Studied by Gold Diffusion
  Published in: Polycrystalline Semiconductors IV (p3)
• Application of Surface Electron Beam Induced Voltage Method for the Contactless Characterization of Semiconductor Structures
  Published in: Beam Injection Assessment of Defects in Semiconductors (p327)
• EBIC and DLTS Study of Deformation Induced Defect Thermal Stability in n-Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p567)
• EBIC Investigations of Deformation Induced Defects in Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p529)
• EBIC-Investigation of the Dislocation-Impurity Interaction in Silicon
  Published in: Ion Implantation in Semiconductors (p59)
• Electrical and Optical Properties of Dislocations Generated under Pure Conditions
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p453)
• Electrical Characterisation of 4H-SiC Epitaxial Samples Treated by Hydrogen or Helium
  Published in: Silicon Carbide and Related Materials 2006 (p347)
• Electrical Properties of Dislocation Impurity Atmospheres in Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p367)
• Electrical Properties of Oxygen Precipitates Formed During Two Step Low Temperature Annealing
  Published in: Polycrystalline Semiconductors V (p39)
• Enhanced Gold Diffusion in Silicon under Intrinsic Point Defect Flow
  Published in: Defects in Semiconductors I (p227)
• Formation of Electrical Activity of Dislocations in Si during Plastic Deformation
  Published in: Polycrystalline Semiconductors IV (p15)
• Gold Diffusion as a Tool for Defect Characterization in Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p495)
• Gold Gettering by H⁺ or He⁺⁺ Ion Implantation Induced Cavities and Defects in Cz Silicon Wafers
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p297)
• Hydrogen Penetration into Si under Wet Chemical Etching: Experiment and Simulation
  Published in: Polycrystalline Semiconductors VI (p121)