Papers by Author: Eugénie Martinez

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Digital Etching of GaAs Materials: Comparison of Oxidation Treatments
Authors: Mickaël Rebaud, Marie Christine Roure, Virginie Enyedi, Lukasz Borowik, Eugénie Martinez, Laura Toselli, Pascal Besson
Abstract: Oxidation of a GaAs surface was performed with liquid H2O2, gaseous O2 and O3 in order to identify the best solution for digital etching. The oxide layer formed with H2O2 is Garich and exhibits surface roughening which can be understood by oxide hydrolysis/condensation model. Roughening makes aqueous H2O2 irrelevant as an oxidizing agent for repeated oxidation steps. On the other hand, a smooth oxide layer can be obtained with gaseous O2 and O3. Thickness of the formed oxide layer is controlled by time exposure to the oxidizing agent. The nature of the oxide was analyzed by XRay Photo-electron Spectroscopy and is also timedependent.
61
Germanium Surface Passivation Using Ozone Gaseous Phase
Authors: Virginie Loup, Pascal Besson, Olivier Pollet, Eugénie Martinez, Emmanuelle Richard, Sandrine Lhostis
37
Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers
Authors: S. Founta, N. Gogneau, Eugénie Martinez, Gabriel Ferro, Yves Monteil, B. Daudin, H. Mariette
1561
3C-SiC Pseudosubstrates for the Growth of Cubic GaN
Authors: P. Dupel, Thierry Chassagne, Didier Chaussende, Yves Monteil, François Cauwet, Etienne Bustarret, A. Deneuville, G. Bentoumi, Eugénie Martinez, B. Daudin, G. Feuillet
1467
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