Papers by Author: Fabrizio Omarini

Abstract: The results of a new epitaxial process using an industrial 6x2” wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H2>0.05) and an increase of the growth rate until about 20 µm/h has been measured. No difference has been observed in terms of defects, doping uniformity (average maximum variation 8%) and thickness uniformity (average maximum variation 1.2 %) with respect to the standard process without HCl.

Abstract: The present production processes for epitaxial SiC do not allow the matching of productivity with the material quality requested by the microelectronics market. Here, to respond to such a demand, a combined experimental and multi-scale – multi-hierarchy modeling approach was adopted. Models allow to verify a priori the role of process operative parameters on the performance ones for both the final product and of the process itself, like growth rate uniformity, film stoichiometry and dopants incorporation, homogeneous nucleation of particulate, microdefects and film morphology. Specifically, in this work the developing of a lumped deposition mechanism is addressed