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Papers by Author: Felix Oehlschläger

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Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity

Authors: Felix Oehlschläger, Sandrine Juillaguet, Hervé Peyre, Jean Camassel, Peter J. Wellmann

Abstract: Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following work describes the development of a PL-topography method for the determination of charge carrier distribution in p-type SiC and shows the correlation of PL-Intensity and charge carrier concentration. With this setup it is possible to characterize wafers up to a size of 2” at room- and low temperature in a non-destructive way.

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P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates

Authors: Philip Hens, Mikael Syväjärvi, Felix Oehlschläger, Peter J. Wellmann, Rositza Yakimova

Abstract: The co-doping of nitrogen and aluminum has been studied in the sublimation epitaxy growth process. It is shown that the doping may be tuned from n-type to p-type by effect of substrate doping, growth face and volume of the growth crucible. The co-doped layers show a nearly ideal I V characteristic and luminescence at room temperature.