Papers by Author: François Jomard

Abstract: 4H-SiC vertical bipolar power diodes have been fabricated with bilayer metallic anode contact based on an Al-Ti-Ni ohmic contact and a thick Al over-metallization. An optical window of 100 × 100 μm2 has been created through the anode contact with a SIMS Cameca IMS 4F equipment using Cs+ primary ions at 10 kV and with a beam spot size of 100 nm. The current/voltage characteristics of the diodes show that the SIMS process does not induce an increase of the leakage currents in forward nor in reverse bias. OBIC UV photogeneration occurs under the optical window and not under the contact metal.

Abstract: Austenitic Fe-Mn-C steels are Ultra High Strength Steels which may be used for the production of deep drawn automotive parts containing extremely high residual stress and strain levels. In consequence, hydrogen absorption occurring during the corrosion process in aqueous environments may enhance the sensitivity of these steels to different kinds of hydrogen-induced damage, in particular Stress Corrosion Cracking (SCC). In order to predict and prevent SCC, it is important to study the behaviour of hydrogen in these austenitic steels exposed to aqueous environments and in particular the dependence on the alloy chemistry and microstructure. SIMS profiles of deuterium introduced by cathodic charging in selected specimens were used to characterize the diffusion of hydrogen in these steels. This allowed to be studied the role of chemical composition and microstructure on the kinetics of H absorption at room temperature. The competition between bulk matrix diffusion and short-circuit diffusion phenomena along grain boundaries was investigated. The results show a strong dependence of H diffusion and distribution on the alloy chemistry and grain size.

Abstract: Oxygen ion diffusion coefficient was measured, for the first time, in oxide films grown by the high temperature oxidation of the AISI 304 austenitic stainless steel. The steel samples were polished and then oxidized in synthetic air in order to grow the chromia oxide (Cr₂O₃) film. The oxygen diffusion experiments in the oxide films were performed by using the¹⁸O isotope as oxygen tracer. The isotope diffusion studies were performed from 750 to 900^o C, in Ar +21%¹⁸O₂ atmosphere and the oxygen ion diffusion profiles were established by secondary ion mass spectrometry (SIMS) analysis. From the¹⁸O diffusion profiles, the bulk, effective and grain boundary diffusivities were determined. Using Wagner´s theory, it is shown that, under the used experimental conditions, the oxygen ion diffusion is large enough to assure the growth rate of the chrome oxide films formed by the oxidation of the AISI 304 stainless steel.

Abstract: In order to investigate the role of oxygen diffusion in the oxidation process of the AISI 439 ferritic stainless steel, oxygen ion diffusion coefficients were determined, for the first time, in oxide films formed by the oxidation of this steel. Steel samples were firstly oxidized from 750^o C to 900^o C, in synthetic air, in order to grow oxide films mainly made up of chrome oxide; the oxygen diffusion experiments were then performed using the stable isotope ¹⁸O as oxygen tracer. The introduction of the ¹⁸O in the oxide film was performed by means of the gas-solid isotopic exchange method, in the temperature range of 750-900^o C, in Ar+21%¹⁸O₂ atmosphere. The ¹⁸O diffusion profiles were established by secondary ion mass spectrometry (SIMS). Parabolic oxidation constants calculated by means of Wagner´s theory, using the oxygen ion diffusion coefficient determined by our experimental process, are greater than oxidation constants previously determined in oxidation experiments from 850 to 950º C, in air, which indicates that the oxygen ion diffusion is large enough to assure the growth rate of the oxide film formed by the oxidation of the AISI 439 steel in these temperatures.

Abstract: Oxygen diffusion coefficients were measured in polycrystalline ZnO by means of the gas-solid exchange method using the isotope 18O as the oxygen tracer. The diffusion annealings were performed at 892oC and 992oC, in an Ar+18O2 atmosphere under oxygen partial pressures from 0.1 to 1atm. After the diffusion annealings, the 18O diffusion profiles were established by secondary ion mass spectrometry (SIMS). Increasing the oxygen pressure leads to an increase of the oxygen diffusion in ZnO. The bulk diffusion coefficients depends on oxygen pressure according to , at 882oC, or , at 992oC, which indicates that the oxygen bulk diffusion mechanism should preferentially take place by means of interstitial oxygen having a null effective charge. The grain boundary diffusion coefficients show little dependence on oxygen pressure at 882oC, given by , which should correspond to a diffusion mechanism by means of interstitial oxygen, with a double negative charge, but at 992oC this dependence is corresponding to a diffusion mechanism by interstitial oxygen having a null effective charge. The results also show that the grain boundary is a fast path for the oxygen diffusion in polycrystalline ZnO.

Abstract: Oxygen diffusion coefficients were determined in a commercial ZnO-based varistor by means of the gas-solid exchange method using the isotope 18O as the oxygen tracer. The diffusion annealings were performed at 892, 942, 992 and 1092oC, in an Ar + 18O2 atmosphere under an oxygen partial pressure of 0.2 atm. After the diffusion annealings, the 18O diffusion profiles were established by secondary ion mass spectrometry (SIMS). The results show an increase of the oxygen diffusion in the varistor, both in bulk and in grain boundaries, when compared to the oxygen diffusion in undoped ZnO. The increase of the oxygen bulk diffusion in the varistor agrees with an interstitial mechanism for the oxygen diffusion. The results also show that the grain boundary is a fast path for the oxygen diffusion in the varistor. However, the oxygen diffusion in the grain boundaries of the varistor seems to depend on several chemical and microstructural parameters and does not allow a simple explanation.

Abstract: Yttria-stabilized zirconia (YSZ) ceramic is considered as an attractive matrix for nuclear applications, such as inert matrix for the destruction of excess plutonium or good host material for nuclear waste storage. Some actinide elements in high-level radioactive wastes can be simulated by cerium as tetravalent actinide, and gadolinium as trivalent actinide or neutron absorber. The present work is focused on the diffusion study of Ce and Gd in YSZ single crystal and high density polycrystals. A thin film of Ce or Gd was deposited either by spin-coating method or by physical vapour deposition on the surface of polished samples. The diffusion experiments were performed from 1173 to 1673 K under air. The Ce or Gd diffusion profiles were determined by secondary ion mass spectrometry. The experiments led to the determination of effective diffusion coefficient, Deff, bulk and grain boundary diffusion coefficients, DB and DGB. The dependence of these diffusion coefficients on temperature is described by means of Arrhenius equations and the diffusivity is compared with literature.

Abstract: Electronic grade diamond is usually grown by Microwave Plasma assisted CVD from a hydrogen rich CH4/H2 mixture, hence hydrogen is likely to be incorporated during growth. It may thus affect the properties of the material. In this work, we present the state of the art on the understanding of the diffusion properties of hydrogen and of the hydrogen-dopant interactions in diamond. First, we show the existence of strong interactions between H and boron dopants in diamond. The formation of H-acceptor pairs results in the passivation of the acceptors. Further, we show that an excess of hydrogen in selected boron-doped diamond epitaxial layers can result in the creation of H and boron-containing donors with a ionization energy of 0.36 eV (about half the ionization energy of phosphorus). At 300 K, the n-type conductivity of hydrogenated borondoped diamond is several orders of magnitude higher than the conductivity of phosphorus-doped diamond. The formation process of these new donors is discussed.

Abstract: The n-type doping of diamond with phosphorus suffers from defects reducing the electron mobilities and inducing some degree of compensation. In addition, the relatively high ionization energy (0.6 eV) of phosphorus severely limits the electrical activity of the dopants. Here, we present two recent advances of the n-type doping of diamond. One is based on the significant reduction of the compensation ratio of highly compensated phosphorus-doped diamond by thermal annealings. The second one presents the possibility of converting p-type boron-doped diamond into n-type by deuterium diffusion and formation of deuterium-related shallow donors with ionization energy of 0.33 eV.