Papers by Author: Guo Bin Li

Abstract: In order to investigate Ca evaporation behavior in the electron beam melting process, metallurgical-grade silicon was melted in an electron beam furnace with different experimental conditions. The results showed that the content of impurity Ca was significantly decreased in the early time, while these changed slowly with the extension of the melting. The removal rate of Ca was controlled by the transfer of Ca atoms from the bulk liquid silicon to liquid/gas phase interface within the range of experiment temperature.

Abstract: The growth in the solar energy technology caused inshortage solar grade Si. As a lowcost, environmental friendly technology, metallurgical method purity silicon is developed significantly. However, as a typical impurity in Si, B is difficult to be removed by directional refining or vacuum melting due to its large segregation coefficient and less evaporation coefficient. In this paper, the big difference of evaporation pressure between Si and B can be applied to separate B from Si, in which, B is remained in molten Si, while most of Si becomes evaporant. Electron beam is applied to scan molten Si and the Si existed in the form of the evaporant is gather on the watercooled crystallizer. The content B in the evaporant is undetectable by ICP-MS.

Abstract: The distribution of resistivity, impurity and polarity in multicrystalline silicon ingot prepared by directional solidification method was detected. The effect of impurity distribution on resistivity was also researched. The results show that the shapes of equivalence line of resistivity in the cross section and vertical section of the silicon ingot depend on the solid-liquid interface. The resistivity in the vertical section increases with the increasing of solidified height at the beginning of solidification and reaches to maximum at the polarity transition point, then decreases rapidly with the increasing of solidified height and tends to zero on the top of the ingot because of the high impurity concentration. Study proves that the variation of resistivity in the vertical section is mainly relevant to the concentration distribution of the impurities such as Al, B and P in the growth direction.

Abstract: Multi-crystalline silicon ingots were prepared by directional solidification using vacuum induction melting furnace. The content of aluminum and iron deeply decreased in the columnar crystal region of the multi-crystalline silicon ingots. The columnar crystal growth broke off corresponded to the iron contents sharply increased. The height of columnar crystal in the silicon ingots related to the pulling rates had been clarified by the constitutional supercooling theory. The maximum of the resistivity and the minority carrier lifetime closed to the transition zone where the conductive type changed from p-type to n-type in silicon ingots. Further analysis suggested that the electrical properties were related to the contents of shallow level impurities aluminum, boron and phosphorus.

Abstract: In production process of continuous casting slab in ferrous metallurgy, in order to realize soft reduction and obtain continuous casting slabs without internal defects, it is important to determine the location of final solidifying end of slabs exactly. In this paper, a set of physical simulation device which simulates detecting the final solidifying end was designed according to similarity theory. Through experimental study and mathematical statistic method, we analyzed the influence of each factor on the detected results. The research results may provide certain guidance for the on-line detection final solidifying end in situ.