Papers by Author: Guo Hao Yu

Abstract: The GaN film deposited on ITO glass substrate by PECVD was characterized using XPS, SEM and reflectance spectra. XPS analysis indicated that the chemical status of the film surface was predominated in mixture phase of GaN and Ga2O3. It was observed that Tthe film annealed at 400°C exhibited platelet-shaped and hexagonal structure and c-plane textured morphology from SEM images. The reflectance spectra show that the absorption cutoff wavelength of the sample annealed at 400 °C was broadened to 1100nm roughly. From the results, Iit is concluded that the GaN film grown on ITO glass substrate by PECVD will be a promising full spectra material.

Abstract: Low-temperature plasma deposition of diamond-like carbon (DLC) and gallium nitride thin-films grown on Si substrate by PECVD was investigated using atomic force microscopy and reflectance spectra for photovoltaic devices application. It was found that the morphological features of the GaN film depend on the substrates under the optimum deposition conditions. The optical band gap of the films was approximately 5.5eV for PECVD DLC and approximately 3.3 eV for PECVD GaN.