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Papers by Author: H.J. Stöckmann

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Determination of the Lattice Site of Nitrogen after Implantation into ZnSe

Authors: K. Marbach, Bernd Ittermann, M. Füllgrabe, M. Heemeier, F. Kroll, F. Mai, P. Meier, D. Peters, H. Thiess, H. Ackermann, H.J. Stöckmann, W.-D. Zeitz, H. Wenisch, D. Hommel, G. Landwehr

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Donor Doping of ZnSe: Lattice Location and Annealing Behavior of Implanted Boron

Authors: Bernd Ittermann, G. Welker, F. Kroll, F. Mai, K. Marbach, H. Ackermann, H.J. Stöckmann, E. Oldekop, W.-D. Zeitz

1389

Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A β-NMR Study on the Fermi-Level Dependence

Authors: H.-P. Frank, E. Diehl, K..-H. Ergezinger, Bernd Fischer, Bernd Ittermann, F. Mai, K. Marbach, S. Weißenmayer, G. Welker, H. Ackermann, H.J. Stöckmann

135

β NMR of Nonsubstitutional ¹²B after Implantation into P-Type Silicon

Authors: Bernd Fischer, W. Seelinger, E. Diehl, K.-H. Ergezinger, H.-P. Frank, Bernd Ittermann, F. Mai, G. Welker, H. Ackermann, H.J. Stöckmann

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