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Articles by author: H. Nakashima

• Change in Microstructure during Annealing of Ultrafine Grained Aluminum Produced by ARB
  Published in: Aluminium Alloys 2002 - ICAA8 (p423)
• Correlation of Grain Boundary Energy with Boundary Dislocation Density
  Published in: Grain Growth in Polycrystalline Materials II (p239)
• Deep Levels of Vanadium- and Chromium-Hydrogen Complexes in Silicon
  Published in: Defects in Semiconductors 17 (p939)
• Diffusion and Electrical Properties of 3d Transition-Metal Impurity Series in Silicon
  Published in: Defects in Semiconductors 17 (p761)
• Diffusivities of 3D Transition-Metal Impurities in Silicon
  Published in: Defects in Semiconductors 16 (p227)
• Dislocation Structure and Activated Slip Systems in β-Silicon Nitride during High Temperature Deformation
  Published in: Creep and Fracture of Engineering Materials and Structures (p825)
• Effect of Boron and Carbon Addition on High Temperature Deformation Behavior of β-Silicon Carbide
  Published in: Towards Innovation in Superplasticity II (p519)
• Electronic Structure in Nd_2-xCe_xCuO₄ and Pr_2-xCe_xCuO₄ Studied by Two Dimensional Angular Correlation of Positron Annihilation Radiations
  Published in: Positron Annihilation - ICPA-9 (p683)
• Grain Boundary Migration in Fe-3%Si Bicrystal
  Published in: Grain Growth in Polycrystalline Materials II (p221)
• Grain Boundary Migration in Fe-Si Alloy Bicrystals
  Published in: Intergranular and Interphase Boundaries in Materials (p629)
• Grain Boundary Structure and Its Energy of <110> Symmetric Tilt Boundary in Copper
  Published in: Recrystallization and Grain Growth (p807)
• Influence of Partial Annealing Temperature on Cube Texture in High Purity Aluminum Foils
  Published in: Aluminium Alloys 2002 - ICAA8 (p569)
• Metastable-Defect Behaviors of Iron-Boron Pairs in Silicon
  Published in: Defects in Semiconductors 17 (p1191)
• Metastable-Defect Behaviors of Iron-Boron Pairs in Silicon Using Recombination-Enhanced Defect Reaction
  Published in: Defect and Diffusion Forum Vols. 136-137 (p41)
• Nanocharacterization of Semiconductors by Scanning Photoluminescence Microscopy
  Published in: Beam Injection Assessment of Defects in Semiconductors (p151)