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Articles by author: H. Stanzl

• Analysis of Doping in ZnSe and ZnSSe by Far-Infrared Reflectance under Oblique Incidence
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p73)
• Critical Thickness Determination of II-VI Semiconductors by Rheed and X-Ray Diffraction
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p147)
• HRXRD Investigations on Epitaxially Grown ZnTe, ZnSe and ZnSeTe Layers
  Published in: Defect and Diffusion Forum Vols. 109-110 (p19)
• Incorporation and Interaction of Hydrogen with Acceptor Impurities in II-VI Semiconductor Compounds
  Published in: Defects in Semiconductors 17 (p447)
• Investigations of the Hydrostatic Pressure Dependence of the E₀ + Δ₀ Gap, the Excitonic Binding Energy and the Refractive Index of Epitaxial ZnSe layers
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p271)
• MOVPE of ZnSE and Zn(S,Se) for Blue LEDs
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p105)
• Phase Matched Second Harmonic Generation in ZnTe Optical Waveguides
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p319)
• Spatial Confinement of Misfit Dislocations at the Interfaces of Epitaxial CdSe/GaAs(111) and ZnTe/GaAs(111) Studied by TEM
  Published in: Defects in Semiconductors 17 (p567)