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Papers by Author: Hans Jürgen von Bardeleben

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EPR Studies of Interface Defects in n-Type 6H-SiC/SiO₂ Using Porous SiC

Authors: Hans Jürgen von Bardeleben, J.L. Cantin, Marina G. Mynbaeva, Stephen E. Saddow

495

EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC

Authors: V.Ya. Bratus, I.N. Makeeva, S.M. Okulov, T.L. Petrenko, T.T. Petrenko, Hans Jürgen von Bardeleben

517

EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC

Authors: Hans Jürgen von Bardeleben, J.L. Cantin

513

Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold

Authors: Hans Jürgen von Bardeleben, J.L. Cantin, P.G. Baranov, E.N. Mokhov

509

Low-Frequency Vibrational Spectroscopy in SiC Polytypes

Authors: B. Pajot, C. J. Fall, J.L. Cantin, Hans Jürgen von Bardeleben, R. Jones, Patrick R. Briddon, F. Gendron

349

Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI)

Authors: E. Hugonnard-Bruyère, Fabrice Letertre, Lea Di Cioccio, Hans Jürgen von Bardeleben, J.L. Cantin, Thierry Ouisse, Thierry Billon, Gérard Guillot

715

High Temperature Luminescence Due to Er in Porous Si

Authors: Margarita Stepikhova, W. Jantsch, G. Kocher, M. Schoisswohl, J.L. Cantin, Hans Jürgen von Bardeleben

1533

Stucture of the P_b Center: Endor Investigation

Authors: V.Ya. Bratus, S.S. Ishchenko, S.M. Okulov, I.P. Vorona, Hans Jürgen von Bardeleben

529

Electron Paramagnetic Resonance Studies of Intrinsic Defects in Electron-Irradiated GaAs

Authors: Y.Q Jia, Hans Jürgen von Bardeleben, Didier Stiévenard, Christian Delerue

1

The DX Centers: A Comparison of Theoretical Predictions and Experimental Results

Authors: Hans Jürgen von Bardeleben

159

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