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Articles by author: Hiroshi Yano

• 3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method
  Published in: Silicon Carbide and Related Materials 2005 (p423)
• 4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching
  Published in: Silicon Carbide and Related Materials 2001 (p1215)
• 4H-SiC (11-20) Epitaxial Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p189)
• 4H-SiC MOSFETs on (03-38) Face
  Published in: Silicon Carbide and Related Materials 2001 (p1065)
• Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen
  Published in: Silicon Carbide and Related Materials 2007 (p659)
• Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face
  Published in: Silicon Carbide and Related Materials - 1999 (p1105)
• Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls
  Published in: Silicon Carbide and Related Materials 2005 (p1293)
• Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide
  Published in: Silicon Carbide and Related Materials 2005 (p971)
• Control of Inclined Sidewall Angles of 4H-SiC Mesa and Trench Structures
  Published in: Silicon Carbide and Related Materials 2010 (p485)
• Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2007 (p747)
• Deep States in SiO₂/p-Type 4H-SiC Interface
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p841)
• Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs
  Published in: Silicon Carbide and Related Materials - 2002 (p945)
• Extraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis Substrates
  Published in: Silicon Carbide and Related Materials 2010 (p666)
• Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods
  Published in: Silicon Carbide and Related Materials 2003 (p1353)
• Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl₂-O₂-SiC System
  Published in: Silicon Carbide and Related Materials 2009 (p771)