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Articles by author: Hiroyuki Nagasawa

• ‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p291)
• Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping
  Published in: Silicon Carbide and Related Materials 2011 (p415)
• Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance
  Published in: Silicon Carbide and Related Materials 2007 (p89)
• Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p339)
• Crystallinity of 3C-SiC Films Grown on Si Substrates
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p191)
• Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length
  Published in: Silicon Carbide and Related Materials 2011 (p1113)
• Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas Supply
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p619)
• Electrical and Optical Characterization of SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p365)
• Growth of 3C-SiC Bulk Material by the Modified Lely Method
  Published in: Silicon Carbide and Related Materials 2003 (p151)
• Hall Effect in the Channel of 3C-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2004 (p441)
• Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates
  Published in: Silicon Carbide and Related Materials 2001 (p319)
• High Quality 3C-SiC Substrate for MOSFET Fabrication
  Published in: HeteroSiC & WASMPE 2011 (p91)
• High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility
  Published in: Silicon Carbide and Related Materials 2011 (p1109)
• Iron-Related Defect Centers in 3C-SiC
  Published in: Silicon Carbide and Related Materials 2010 (p265)
• Microstructure of Cubic SiC Grown by the Modified Lely-Method
  Published in: Silicon Carbide and Related Materials 2003 (p147)