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Articles by author: Hitoshi Umezawa

• Characteristics of Diamond SBD’s Fabricated on Half Inch Size CVD Wafer Made by the “Direct Wafer Fabrication Technique”
  Published in: Silicon Carbide and Related Materials 2009 (p1227)
• Characterization of Fast Switching Capability for Diamond Schottky Barrier Diode
  Published in: Silicon Carbide and Related Materials 2010 (p820)
• DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator
  Published in: Silicon Carbide and Related Materials 2007 (p1349)
• Device Characteristics Dependence on Diamond SDBs Area
  Published in: Silicon Carbide and Related Materials 2008 (p1003)
• Diamond Vertical Schottky Barrier Diode with Al₂O₃ Field Plate
  Published in: Silicon Carbide and Related Materials 2011 (p1319)
• High Temperature Characteristics of Diamond SBDs
  Published in: Silicon Carbide and Related Materials 2009 (p1231)
• High-Performance Surface-Channel Diamond Field-Effect Transistors
  Published in: Silicon Carbide and Related Materials 2000 (p815)
• Recent Progress of Diamond Device toward Power Application
  Published in: Silicon Carbide and Related Materials 2008 (p999)