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Articles by author: Horst P. Strunk

• Microstructure of Cubic SiC Grown by the Modified Lely-Method
  Published in: Silicon Carbide and Related Materials 2003 (p147)
• Minority Carrier Diffusion Lengths in Silicon Doped Gallium Nitride Thin Films Measured by Electron Beam Induced Current
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p807)
• On the Nanostructure of Hydrogenated Silicon
  Published in: Polycrystalline Semiconductors IV (p167)
• Origination and Properties of Dislocations in Thin Film Nitrides
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p39)
• Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial Growth
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p135)
• Relaxation of Misfit Induced Strain in Si-Based Heterostructures
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p93)
• Shunts in n+p-Junction Solar Cells Fabricated on Multicrystalline Cast Silicon
  Published in: Polycrystalline Semiconductors IV (p497)
• Solvents Influencing the Morphology of Epitaxial Solution-Grown Strained Ge/Si Layers
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p403)
• Stress Relaxation Mechanisms by Dislocations in the System Ge on Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p433)
• Structural Effects in Ultra-Thin Iridium Silicide
  Published in: Polycrystalline Semiconductors VI (p101)
• Structure and Optical Properties of Hydrogenated Silicon Films Prepared by Plasma Enhanced Chemical Vapour Deposition
  Published in: Polycrystalline Semiconductors IV (p249)
• Tailoring Texture in Laser Crystallization of Silicon Thin-Films on Glass
  Published in: Polycrystalline Semiconductors VII (p173)
• The Microstructure of Sm_2-xCe_xCuO_4-δ
  Published in: Polycrystalline Semiconductors III (p119)