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Articles by author: J. Schmidt

• Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR Study
  Published in: Silicon Carbide and Related Materials 2005 (p535)
• High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p587)
• High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
  Published in: Defects in Semiconductors 19 (p703)
• Magnetic Resonance from a Metastable Sulfur-Pair-Related Complex Defect in Silicon
  Published in: Defects in Semiconductors 16 (p251)
• Magnetic Resonance Techniques for Excited State Spectroscopy of Defects in Silicon
  Published in: Defects in Semiconductors 17 (p1345)
• Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon
  Published in: Defects in Semiconductors 17 (p1371)
• ODMR and Electron Spin Echo Studies on the Non-Radiative Triplet State of the (V-O)° Defect in Silicon
  Published in: Defects in Semiconductors 16 (p357)
• Strong Electron Correlation in Si-OV and Si-V - An Ab Initio Cluster Study -
  Published in: Shallow Impurities in Semiconductors V (p87)
• The Configurational Change of a Metastable S-Cu Defect in Silicon
  Published in: Defects in Semiconductors 17 (p1179)
• The Dynamics of the Non-Radiative Triplet State of the (V-O)⁰ Defect in Silicon: Evidence for a Radical Pair Mechanism
  Published in: Shallow Impurities in Semiconductors V (p195)
• The Electronic Structure of the Be Acceptor Centers in 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p805)
• The Electronic Structure of the N Donor Center in 4H-SiC and 6H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p525)
• The Spatial Distribution of the Electronic Wave Function of the Shallow Boron Acceptor in 4H- and 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p799)