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Articles by author: J. Wagner

• Hall Effects, DLTS and Optical Investigations on the Intrinsic 78/203 meV Acceptor in GaAs
  Published in: Defects in Semiconductors 15 (p951)
• Incorporation of Be Into In_x Ga_1-x As (0.004≤x≤0.17) Studied by Photoluminescence and Resonant Raman Spectroscopy of Local Vibrational Modes
  Published in: Defects in Semiconductors 17 (p241)
• Incorporation of Silicon in (311)A and (111)A GaAs Grown by Molecular Beam Epitaxy
  Published in: Defects in Semiconductors 17 (p259)
• Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C
  Published in: Defects in Semiconductors 17 (p247)
• Infrared and Raman Studies of Si Delta-Doped (100) GaAs Grown by MBE at 400°C on c(4x4) Surfaces
  Published in: Defects in Semiconductors 18 (p425)
• Plasma Deposition, Properties and Structure of Amorphous Hydrogenated Carbon Films
  Published in: Properties and Characterization of Amorphous Carbon Films (p41)
• Raman Spectroscopic Study of Si Local Vibrational Modes in GaAs
  Published in: Defects in Semiconductors 15 (p815)
• Raman Spectroscopy of Dopant Impurities in Homogeneously and Planar (δ) Doped III-V Semiconductors
  Published in: Shallow Impurities in Semiconductors IV (p1)
• The Assignment of the 78/203meV Double Acceptor in GaAs to B_As Impurity Antisite Centers
  Published in: Defects in Semiconductors 17 (p229)