Paper Titles

Raman Spectroscopy of Dopant Impurities in Homogeneously and Planar (δ) Doped III-V Semiconductors
p.1

Determination of Residual Donor Concentration by Selective Pair Luminescence in Semi-Insulating GaAs
p.11

Dynamics of Selectively Excited Donor Acceptor Pairs in GaAs
p.21

A New Technology of Boron Diffusion into Silicon by Rapid Thermal Processing
p.29

Control of Shallow Boron Profile in Silicon
p.35

Photoionization Cross-Section Spectra of Shallow Acceptors in Semiconductors: Effect of a Change in Heavy - to Light-Hole Mass Ratio
p.41

Electron-Hole Mechanism of Migration and Defect Interaction
p.47

Delta-Doping in III-V Semiconductors
p.53

HomeMaterials Science ForumMaterials Science Forum Vols. 65-66Raman Spectroscopy of Dopant Impurities in...

Raman Spectroscopy of Dopant Impurities in Homogeneously and Planar (δ) Doped III-V Semiconductors

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Shallow Impurities in Semiconductors IV

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Periodical:

Materials Science Forum (Volumes 65-66)

Pages:

1-10

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66.1

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Online since:

January 1991

Authors:

J. Wagner

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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