Papers by Author: J. Xu

Abstract: Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.

Abstract: A new approach to obtain Si nanostructures on insulating layer is proposed by laser irradiation on ultra-thin hydrogenated amorphous silicon (a-Si:H) films with subsequently thermal annealing. It was found that the surface nanostructuring was occurred when the laser fluence exceeded the threshold value as revealed by AFM images. The size and area density of formed Si nanostructures were depended on the laser fluence and film thickness while thermal annealing played an important role in the size and its distribution. The results showed that a high density (>1011cm-2) Si nanostructures with average lateral size of 10-20nm can be achieved by the present technology.